Product Model

RJP4013ASP-00#J5

Introduction

Transistor IC for High-Voltage Switching Applications

Brand and Manufacturer

Renesas Technology Corp

Features

High breakdown voltage

Low drive power

Low on-resistance

High-speed switching

Product Performance

Durable under high-frequency operation

Optimized for high voltage circuits

Stable performance across a range of temperatures

Technical Specifications

Transistor Type: IGBT

Configuration: Single

Voltage - Collector Emitter Breakdown (Max): 400V

Current - Collector (Ic) (Max): 30A

Power - Max: 40W

Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 20A

Turn On Time (typ): -

Turn Off Time (typ): -

Operating Temperature: -55°C ~ 150°C

Dimensions, Shape, and Packaging

Package: SOP8

Rectangular, Small Outline Package

Quality and Reliability

Renesas certified quality management

Highly reliable under varying operating conditions

Product Advantages

Efficient power control in compact design

Suitable for high voltage and high current applications

Product Competitiveness

High performance-to-cost ratio

Competes with leading industry standards for IGBTs

Compatibility

Compatible with various gate drivers and controllers

Standard Certification and Compliance

Compliant with industry-standard certifications for electronic components

Lead-free and RoHS compliant

Lifespan and Sustainability

Long operational life

Designed for robust performance over many cycles

Actual Application Fields

Power management solutions

Inverter applications

Power supplies for electrical equipment

Industrial automation systems

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